Matteo Perenzoni

Matteo Perenzoni was born in Rovereto, Trento, Italy, in 1977. He received the Laurea degree in Electronics Engineering from the University of Padova, Padova, Italy, in 2002. In 2002, he was with the University of Padova, where he worked on mixed-signal integrated circuit design for channel decoding. Since January 2004, he has been with the Center for Materials and Microsystems of the Fondazione Bruno Kessler (FBK-CMM), Trento, Italy, as a Researcher working in the Integrated Radiation and Image Sensors (IRIS) research unit. He has been collaborating on teaching courses of electronics and sensors for the NanoMicro Master, Trento, from 2006 to 2010. In 2011, he has been director of the bi-annual Optoelectronics and Photonics Winter School coorganized with the University of Trento. During 2014, he has been visiting research scientist in the THz Sensing Group in the Technical University of Delft. He is member of the technical program committee of the European Solid-State Circuit Conference (ESSCIRC) since 2015. His research interests include the design of advanced vision sensors for X-ray, infrared, and terahertz, as well as the modeling and optimization of analog integrated circuits: within the IRIS research unit he is responsible of the multispectral and terahertz research line.

All Publications

1. Domingues, Suzana; Perenzoni, Daniele; Perenzoni, Matteo; Stoppa, David,
   CMOS Integrated Lock-in Readout Circuit for FET Terahertz Detectors,
   in «JOURNAL OF INFRARED, MILLIMETER, AND TERAHERTZ WAVES»,
   vol. 38,
   n. 6,
   2017
   , pp. 679 -
   688
2. Gasparini, Leonardo; Bessire, Bänz; Unternährer, Manuel; Stefanov, André; Boiko, Dmitri; Perenzoni, Matteo; Stoppa, David,
   SUPERTWIN: towards 100kpixel CMOS quantum image sensors for quantum optics applications,
   Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101112L,
   vol.10111,
   2017
   , pp. 101112L-
   , (Quantum Sensing and Nano Electronics and Photonics XIV,
   San Francisco, California, United States,
   January 28, 2017)
3. Perenzoni, Matteo; Pancheri, Lucio; Stoppa, David,
   Compact SPAD-Based Pixel Architectures for Time-Resolved Image Sensors,
   in «SENSORS»,
   vol. 16,
   n. 5,
   2016
   , pp. 745 -
4. Matteo, Perenzoni; Nicola, Massari; Daniele, Perenzoni; Leonardo, Gasparini; David, Stoppa,
   A Pixel Analog-Counting Single-Photon Imager With Time-Gating and Self-Referenced Column-Parallel A/D Conversion for Fluorescence Lifetime Imaging,
   in «IEEE JOURNAL OF SOLID-STATE CIRCUITS»,
   vol. 51,
   n. 1,
   2016
   , pp. 155 -
   167
5. Ali, Muhammad; Perenzoni, Matteo; Stoppa, David,
   A Methodology to Measure Input Power and Effective Area for Characterization of Direct THz Detectors,
   in «IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT»,
   vol. 65,
   n. 5,
   2016
   , pp. 1225 -
   1231
6. Khatib, Moustafa; Perenzoni, Matteo,
   Pixel-level continuous-time incremental sigma-delta A/D converter for THz sensors,
   Proc. SPIE 9899,
   vol.9899,
   2016
   , pp. 98990E-
7. Ali, Muhammad; Perenzoni, Matteo; Stoppa, David,
   A high-gain, low-noise switched capacitor readout for FET-based THz detectors,
   Proceedings of the 42nd European Solid-State Circuits Conference (ESSCIRC),
   2016
   , pp. 401-
   404
   , (42nd European Solid-State Circuits Conference (ESSCIRC),
   Lausanne, Switzerland,
   12-15/09/2016)
8. Perenzoni, Matteo; Perenzoni, Daniele; Stoppa, David,
   A 64×64-pixel digital silicon photomultiplier direct ToF sensor with 100Mphotons/s/pixel background rejection and imaging/altimeter mode with 0.14% precision up to 6km for spacecraft navigation and landing,
   Proceedings of the 2016 IEEE International Solid-State Circuits Conference (ISSCC),
   2016
   , pp. 118-
   119
   , (2016 IEEE International Solid-State Circuits Conference (ISSCC),
   San Francisco, CA, USA,
   31 Jan.-4 Feb. 2016)
9. Bianco, F.; Perenzoni, D.; Convertino, D.; De Bonis, S. L.; Spirito, D.; Perenzoni, M.; Coletti, C.; Vitiello, M. S.; Tredicucci, A.,
   Terahertz detection by epitaxial-graphene field-effect-transistors on silicon carbide,
   in «APPLIED PHYSICS LETTERS»,
   vol. 107,
   n. 13,
   2015
   , pp. 131104 -
10. Perenzoni, M.; Xu, H.; Stoppa, D.,
    Small area 0.3 pJ/conv, 45 ps time-to-digital converter for arrays of silicon photomultiplier interfaces in 150 nm CMOS,
    in «ELECTRONICS LETTERS»,
    vol. 51,
    n. 23,
    2015
    , pp. 1933 -
    1935

Pages