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Silicon Photomultipliers


Special Issue in Sensors Journal of MDPI about "Image Sensors"
Guest editors: Lucio Pancheri, Matteo Perenzoni, Nicola Massari
Submit your paper now!

We are looking for highly motivated people in the following two domains:

The final program of IEEE Topics on Microelectronics (ToM) Courses 2017 at University of Pavia - Pavia (Italy), has been announced:

The ToM series provides a wide range of focused talks on leading-edge microelectronics topics. IRIS will be there in September 2017, with senior researcher Matteo Perenzoni sharing with you some insights on time-to-digital converters which can be used for sensing applications. We hope to see you there!

IRIS will be at the two CNES workshops in Toulouse, "Radiation Effects on Optoelectronic Detectors" (16/11), and "Photon Counting, Low Flux and High Dynamic Range Optoelectronic Detectors" (17/11) presenting the latest advances in single-photon detectors and imagers.

16/11, 2:55pm: Irradiation Tests on CMOS Digital Silicon Photomultipliers for Ranging Applications
M. Perenzoni, D. Perenzoni, D. Stoppa, C. Virmontois, FBK, CNES

The Researchers' Night 2015, held on the 25th of September, was a great success!

We really would like to thank the hundreds of you who visited our booth and got excited together with us about science! It has been really a wonderful experience also for us in getting in touch with all of you.

Stay tuned as we won't miss the chance to grab your attention even more at the next event!

Two new SiPM detector designed in FBK for PET applications now offer a significantly improved coincidence time resolution, and may help better localize tumours within patients. Improved timing has been demonstrated, with the best coincidence time resolution seen for the 2 × 2 × 3 mm crystals of only 85 ps – an experimental record.

Results are described in a paper published in Physics in Medicine and Biology.

IRIS will be at the Single Photon Workshop 2015 in Geneva, from 13th to 17th of July, to present the latest developments in silicon photomultiplier technology.

You are invited to meet us and attend our talk entitled "High-density cell and high-efficiency Silicon Photomultipliers", presented by Fabio Acerbi.

See you there!

We recently developed a new high-density version of NUV-SiPM, called NUV-HD. Like RGB-HD the devices feature a high fill factor (FF) and a reduced correlated noise.

This new NUV-HD technology combined all the benefits of the HD technology, like high FF, increased photon detection efficiency, low correlated noise and high cell-density (thus high dynamic range), with the advantages of NUV approach for light detection un the blue and near-UV wavelength region.


Molecular imaging (MI) and Proton Therapy (PT) have become fundamental tools for the diagnosis and treatment of diseases such as cancer. Innovation in this field is very strong aiming at improving the imaging capability. The most important development over the last few years is the use of a novel solid-state photo-detector (Silicon Photomultipliers, SiPMs) that can replace the traditional vacuum-based photo-multiplier tubes. This sensor opens the possibility to combine different imaging modalities and to develop compact, light and portable systems with higher performance.

Main activities

The IRIS activity on Silicon Photomultipliers leads to the development of new SiPM technologies, aimed the the optimization of different detector parameters, such as the Dark Count Rate, the Breakdown Voltage uniformity, the Photo Detection Efficiency, the Excess Noise Factor and the Dynamic Range.